Lab Affiliation(s):
Microsystems Technology Laboratories (MTL)
Post Doc Sponsor / Advisor:
Tomas Palacios
Areas of Expertise:
  • 2D semiconductors for nanoelectronics and energy applications
Date PhD Completed:
May, 2012
Expected End Date of Post Doctoral Position:
December 1, 2016

Amirhasan Nourbakhsh

  • Post Doctoral

MIT Unit Affiliation: 

  • Electrical Engineering & Computer Science

Lab Affiliation(s): 

Microsystems Technology Laboratories (MTL)

Post Doc Sponsor / Advisor: 

Tomas Palacios

Date PhD Completed: 

May, 2012

Top 3 Areas of Expertise: 

2D semiconductors for nanoelectronics and energy applications

Personal Statement: 

I am a postdoctoral researcher in the Microsystem Technology Laboratories at MIT. Before that, I received my PhD from IMEC and KULeuven.

My research is broadly focused on understanding physical properties of nano-materials and fabricating nano-devices with desired functionalities to advance the performance of electronic systems and, identify completely new application spaces for nanoelectronics. I am particularly interested in interdisciplinary studies, focused on heterogeneous integration of 2D nanocrystals and novel device architectures which could be helpful in breaking through the scaling limits for transistor miniaturization and enabling low-power transistor operation.

Expected End Date of Post Doctoral Position: 

December 1, 2016

CV: 

Research Projects: 

• Leading a project that involves scaling of 2D transistors to sub-10 nm channel length by utilizing self- assembly nanolithography

• Exploring the negative capacitance effect from metal-oxide ferroelectrics and 2D nanomaterials for ultra-low power logic applications

• Overseeing the development of a selenide-based thin film solar cell 

Thesis Title: 

Graphene functionalization: A route towards the use of graphene for microelectronic applications

Thesis Abstract: 

Graphene is a gapless semiconductor as well as an ideal 2D electron gas system with a high charge carrier mobility. In an attempt to apply this promising material for electrical and optical applications, functionalization of graphene is a prerequisite to introduce a bandgap.In this thesis, we present our findings on two major graphene functionalization methods: covalent and molecular functionalizations of graphene in order to apply it for future electronic and optical devices.

Top 5 Awards and honors (name of award, date received): 

Research Highlight Paper, VLSI Technology Symposium – Kyoto, Japan; 2015
One-year Travel Grant, FWO – Belgian Scientific Research Fund; 2013
Three-year Research Grant, FWO– Belgian Scientific Research Fund; 2012
2011 Scientific Excellence Award– IMEC, Belgium; 2011
Top 100 Graduate Researchers in Nanotechnology, Iranian Nanotechnology Initiative Council; 2008

5 Recent Papers: 

Nourbakhsh, A; Zubair,A; Tavakkoli,A; Sajjad, R; Ling, X; Dresselhaus, M; Kong, J; Berggren, K; Antoniadis, D; and Palacios, T” MoS2 Field-Effect Transistor with Sub-10-nm Channel Length”-  Nano Letters 2016

Nourbakhsh, A; Zubair, A; Dresselhaus, M; Palacios, T; Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application” Nano Letters, 2016

Lockhart, C.; Nourbakhsh, A.; Heyne, M.; Asselberghs, A.; Huyghebaert, C.; Radu, I.; Heyns, M.; De Gendt, S.; “Highly efficient and stable MoS2 FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating” – Nanoscale 2016

 

Nourbakhsh, A; Adelmann, C.; Yi, S; Lee, C; Asselberghs, I; Tallarid, M; Heyns, M; Kong, J; Palacios, T; De Gendt, S; Graphene-oxide-monolayer as an atomically thin seeding layer for atomic layer deposition of high-k dielectrics Nanoscale, 2015

 

Nourbakhsh, AA. Zubair, T. Palacios. “15-nm Channel Length MoS2 FETs with Single- and Double-Gate structures”, VLSI 2015 Technology Symposium, June 2015; Kyoto, Japan 

Contact Information: